Descripción
Interface
PCI-Express 4.0×4, NVMe 1.3
Form Factor
M.2 2280
Total Capacity
500GB
NAND
3D TLC Toshiba BiCS4
External DDR Cache
DDR4 512MB
Sequential Read speed
Up to 5000 MB/s
Sequential Write speed
Up to 2500 MB/s
Random Read IOPS
up to 400k
Random Write IOPS
up to 550k
Dimension
80.5 x 11.25 x 23.5 mm
Mean time between failure (MTBF)
1.77 million hours
Power Consumption (Active)
Average: R : 5.9W; W : 4.5W
Power Consumption (Idle)
13.21mW
Temperature (Operating)
0°C to 70°C
Temperature (Storage)
-40°C to 85°C
Warranty
1. Limited 5-years or 850TBW.
2. Limited warranty based on 5 years or 850TBW, whichever comes first. (*TBW is evaluated by JEDEC workload standard. )
*TBW (Terabyte Written): Terabytes Written is the total amount of data that can be written into a SSD before it is likely to fail.
3. When the usage of an NVME SSD as indicated by the «Percentage Used» (SMART ID: 05) in SMART page of «GIGABYTE SSD toolbox» reaches 100 means out of warranty. (A new unused product will show the number of 0)
Note
• Test system configuration: configuration may vary by models, we will choose the latest platform for verification.
• Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark and IOmeter 1.1.0.
• Speeds based on internal testing. Actual performance may vary.
• 1GB = 1 billion bytes. Actual useable capacity may vary.
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