Descripción

Interface

PCI-Express 4.0×4, NVMe 1.3

Form Factor

M.2 2280

Total Capacity

500GB

NAND

3D TLC Toshiba BiCS4

External DDR Cache

DDR4 512MB

Sequential Read speed

Up to 5000 MB/s

Sequential Write speed

Up to 2500 MB/s

Random Read IOPS

up to 400k

Random Write IOPS

up to 550k

Dimension

80.5 x 11.25 x 23.5 mm

Mean time between failure (MTBF)

1.77 million hours

Power Consumption (Active)

Average: R : 5.9W; W : 4.5W

Power Consumption (Idle)

13.21mW

Temperature (Operating)

0°C to 70°C

Temperature (Storage)

-40°C to 85°C

Warranty

1. Limited 5-years or 850TBW.

2. Limited warranty based on 5 years or 850TBW, whichever comes first. (*TBW is evaluated by JEDEC workload standard. )
*TBW (Terabyte Written): Terabytes Written is the total amount of data that can be written into a SSD before it is likely to fail.

3. When the usage of an NVME SSD as indicated by the «Percentage Used» (SMART ID: 05) in SMART page of «GIGABYTE SSD toolbox» reaches 100 means out of warranty. (A new unused product will show the number of 0)

Note

• Test system configuration: configuration may vary by models, we will choose the latest platform for verification.

• Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark and IOmeter 1.1.0.

• Speeds based on internal testing. Actual performance may vary.

• 1GB = 1 billion bytes. Actual useable capacity may vary.